Company Filing History:
Years Active: 2011-2012
Title: Innovations of Shin Bin Huang
Introduction
Shin Bin Huang is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the efficiency and reliability of memory cells, which are crucial components in modern electronics.
Latest Patents
One of his latest patents is a "Device for Preventing Current-Leakage." This device is strategically placed between a transistor and a capacitor of a memory cell. It features at least two p-n junctions and can function as a lateral silicon controlled rectifier, a diode for alternating current, or a silicon controlled rectifier. The device effectively minimizes current leakage when the transistor is turned off, thereby enhancing the performance of the memory cell.
Another significant patent is the "Method for Manufacturing Capacitor Lower Electrodes of Semiconductor Memory." This method involves creating a first stacked structure over a semiconductor substrate with multiple conductive plugs. A second stacked structure is then formed on top, followed by the creation of trenches that expose the conductive plugs. This innovative approach increases the supporting stress of the capacitor lower electrodes, simplifying the process of placing capacitor upper electrodes and dielectric layers.
Career Highlights
Shin Bin Huang is currently employed at Inotera Memories, Inc., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise and innovative mindset have positioned him as a valuable asset to his company.
Collaborations
He has collaborated with notable colleagues, including Ching-Nan Hsiao and Chung-Lin Huang, contributing to various projects that advance semiconductor technology.
Conclusion
Shin Bin Huang's contributions to the field of semiconductor technology through his patents and work at Inotera Memories, Inc. highlight his role as a key innovator in the industry. His inventions not only address current challenges but also pave the way for future advancements in memory cell technology.