The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Apr. 12, 2010
Shin Bin Huang, Hsinchu County, TW;
Chung-lin Huang, Taoyuan County, TW;
Ching-nan Hsiao, Kaohsiung County, TW;
Tzung Han Lee, Taipei, TW;
Shin Bin Huang, Hsinchu County, TW;
Chung-Lin Huang, Taoyuan County, TW;
Ching-Nan Hsiao, Kaohsiung County, TW;
Tzung Han Lee, Taipei, TW;
Inotera Memories, Inc., Taoyuan County, TW;
Abstract
A device for preventing current-leakage is located between a transistor and a capacitor of a memory cell. The two terminals of the device for preventing current-leakage are respectively connected with a slave terminal of the transistor and an electric pole of the capacitor. The device for preventing current-leakage has at least two p-n junctions. The device for preventing current-leakage is a lateral silicon controlled rectifier, a diode for alternating current, or a silicon controlled rectifier. By utilizing the driving characteristic of the device for preventing current-leakage, electric charge stored in the capacitor hardly passes through the device for preventing current-leakage when the transistor is turned off to improve the current-leakage problem.