Xi'an, China

Shihui Wang

This inventor holds 1 USPTO granted patent. Top assignee: Xidian University. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shihui Wang. Retrieved from https://idiyas.com/inventor/shihui-wang-wpdi58zv

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Shihui Wang: Innovator in Semiconductor Technology

Introduction

Shihui Wang is a prominent inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on improving the performance of semiconductor devices through advanced methodologies.

Latest Patents

Shihui Wang holds a patent titled "Method for characterizing ohmic contact electrode performance of semiconductor device." This patent outlines a method that includes preparing two sets of testing patterns on a semiconductor device, testing the resistance values of these patterns, calculating the sheet resistance of the ohmic contact area, and evaluating the performance of the ohmic contact electrode based on the calculated sheet resistance. He has 1 patent to his name.

Career Highlights

Shihui Wang is affiliated with Xidian University, where he engages in research and development in semiconductor technology. His work has been instrumental in advancing the understanding of ohmic contact performance in semiconductor devices.

Collaborations

Shihui Wang has collaborated with notable colleagues, including Xuefeng Zheng and Xiaohua Ma. Their combined expertise contributes to the innovative research conducted at Xidian University.

Conclusion

Shihui Wang's contributions to semiconductor technology through his patent and research at Xidian University highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in semiconductor device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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