The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Apr. 06, 2019
Xidian University, Xi'an, CN;
Xuefeng Zheng, Xi'an, CN;
Xiaohua Ma, Xi'an, CN;
Yue Hao, Xi'an, CN;
Shuaishuai Dong, Xi'an, CN;
Peng Ji, Xi'an, CN;
Yingzhe Wang, Xi'an, CN;
Zhenling Tang, Xi'an, CN;
Chong Wang, Xi'an, CN;
Shihui Wang, Xi'an, CN;
XIDIAN UNIVERSITY, Xi'an, CN;
Abstract
The present disclosure provides a method for characterizing ohmic contact electrode performance of a semiconductor device. The method comprises: preparing two sets of testing patterns on a semiconductor device; testing resistance values of the two sets of testing patterns respectively; calculating a sheet resistance of an ohmic contact area according to the obtained resistance values; and evaluating the ohmic contact electrode performance of the semiconductor device according to the sheet resistance of the ohmic contact electrode.