Xi'an, China

Peng Ji

This inventor holds 1 USPTO granted patent. Top assignee: Xidian University. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peng Ji. Retrieved from https://idiyas.com/inventor/peng-ji-k58ojbvd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 9.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Peng Ji - Innovator in Semiconductor Technology

Introduction

Peng Ji is a notable inventor based in Xi'an, China. He has made significant contributions to the field of semiconductor technology. His innovative work focuses on improving the performance of semiconductor devices through advanced methodologies.

Latest Patents

Peng Ji holds 1 patent for a method titled "Method for characterizing ohmic contact electrode performance of semiconductor device." This patent outlines a systematic approach to evaluate the performance of ohmic contact electrodes in semiconductor devices. The method involves preparing two sets of testing patterns, measuring their resistance values, calculating the sheet resistance, and ultimately assessing the electrode performance based on these calculations.

Career Highlights

Peng Ji is affiliated with Xidian University, where he engages in research and development in semiconductor technologies. His work has garnered attention for its practical applications in enhancing device performance and reliability.

Collaborations

Peng Ji collaborates with esteemed colleagues, including Xuefeng Zheng and Xiaohua Ma. Their combined expertise contributes to advancing research in the semiconductor field.

Conclusion

Peng Ji's innovative contributions to semiconductor technology exemplify the importance of research and development in enhancing electronic devices. His patent reflects a commitment to improving the efficiency and performance of semiconductor devices, marking him as a significant figure in this domain.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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