Sunnyvale, CA, United States of America

Shih-Hung Li


Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 1,309(Granted Patents)


Location History:

  • Mountain View, CA (US) (2003)
  • Sunnyvale, CA (US) (2000 - 2004)

Company Filing History:


Years Active: 2000-2004

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8 patents (USPTO):Explore Patents

Title: Innovations by Shih-Hung Li: A Leader in Atomic Layer Deposition Technologies

Introduction

Shih-Hung Li is an accomplished inventor based in Sunnyvale, CA, known for his significant contributions to the field of semiconductor processing. With a total of eight patents to his name, Li has been at the forefront of developing advanced technologies that enhance the efficiency and effectiveness of atomic layer deposition (ALD) processes.

Latest Patents

Among his latest patents, two stand out for their innovative methodologies. The first patent details an apparatus and method for fast-cycle atomic layer deposition. This invention introduces a virtual shower curtain established between the substrate support and the reaction chamber, minimizing the volume in which reactants are distributed. The design allows a showerhead to be placed closer to the substrate, reducing the reaction volume and improving efficiency. It also features zero dead space volume valves positioned near the chamber lid for enhanced cycle times.

The second patent focuses on the process conditions and precursors for ALD of aluminum oxide (Al2O3). It describes a semiconductor processing chamber that enables the sequential deposition of high-K Al2O3 thin films using low viscosity precursors. The process begins with the introduction of an aluminum precursor, which forms a monolayer on the substrate before being followed by an oxygen precursor. This sequence allows for controlled growth of the aluminum oxide film to the desired thickness.

Career Highlights

Shih-Hung Li has made substantial contributions to Applied Materials, Inc., where his inventions help optimize semiconductor manufacturing processes. His expertise in atomic layer deposition has enabled improvements in both the speed and quality of thin film applications essential for modern electronics.

Collaborations

Li collaborates closely with colleagues such as Curtis Vass and Liang-Yuh Chen. Together, they work on advancing ALD technology, thereby enhancing the capabilities available to semiconductor manufacturers and contributing to the industry's evolution.

Conclusion

Shih-Hung Li stands out as a prominent figure in innovation within the semiconductor industry. His advancements in atomic layer deposition not only pave the way for enhanced manufacturing processes but also signify his commitment to driving technological progress. As more industries rely on these processes, Li’s contributions will undoubtedly have a lasting impact on the future of electronics.

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