Applied Materials, Inc.

Shih-Hung Li

Curtis Vass

Liang-Yuh Chen

John Vincent Schmitt

Ling Chen

Jun Zhao

Alain Duboust

Christophe Marcadal

Xin Sheng Guo

Jallepally Ravi

Anzhong Chang

Daniel A Carl

Timothy O Green

Kevin H Song

Ravi Jallepally

Method and apparatus for depositing layers by atomic layer deposition. A virtual shower curtain is established between the substrate support and chamber to minimize the volume in which the reactants are distributed. A showerhead may be used to allow closer placement of the substrate thereto, further reducing the reaction volume. Zero dead space volume valves with close placement to the chamber lid and fast cycle times also improve the cycle times of the process.

Apparatus and method for fast-cycle atomic layer deposition

A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al O thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a monolayer of aluminum precursor is chemisorbed onto the substrate surface. Thereafter, non-chemisorbed aluminum precursor is purged from the processing chamber, followed by introduction of an oxygen precursor. The oxygen precursor reacts with the chemisorbed layer, resulting in a monolayer of Al O . Finally, excess oxygen precursor and by-products of the reaction are purged completing the sequential deposition cycle. The sequential deposition cycle can be repeated to grow the Al O film to a desired thickness.

Process conditions and precursors for atomic layer deposition (ALD) of AL2O3

A deposition system for performing chemical vapor deposition comprising deposition chamber and a vaporizer coupled to said chamber. In one aspect, the vaporizer has a relatively short mixing passageway to mix a carrier gas with a liquid precursor to produce a fine aerosol-like dispersion of liquid precursor which is vaporized by a hot plate.

Methods and apparatus for improved vaporization of deposition material in a substrate processing system

An apparatus and method for monitoring the inclination of a wafer residing within a pocket of a semiconductor processing chamber susceptor. The apparatus of the present invention includes a laser beam source that is positioned to direct a laser beam onto the top surface of a wafer that has been positioned within a susceptor pocket. A laser receiver is positioned to detect the laser beam after it has been reflected off the surface of the wafer. The laser receiver emits an output signal to a visual or audible indicator that indicates whether or not the wafer is properly positioned within the pocket of the susceptor.

Wafer out-of-pocket detection method

An improvement in the deposition of materials in a multiple chamber semiconductor processing cluster tool comprising a first cluster of first chambers, a second cluster of second chambers and a transition chamber located between the first cluster and the second cluster, where the transition chamber is adapted to deposit a material upon a wafer. Specifically, the transition chamber provides a flash coating of PVD copper on the wafer which significantly improves the adhesion of subsequently CVD deposited bulk copper without sacrifice in the throughput of the cluster tool.

Method and apparatus for depositing material upon a semiconductor wafer using a transition chamber of a multiple chamber semiconductor wafer processing system

An apparatus and method for monitoring the level of a semiconductor processing chamber susceptor and the inclination of a wafer residing within a pocket of the susceptor. In one embodiment, a light beam transmitter is positioned to direct a light beam, such as a laser beam, onto the top surface of a wafer that has been positioned within a susceptor pocket. The light beam forms a target spot of a particular size and shape on the surface of the wafer. A camera is positioned to observe the target spot. A change in the angular orientation of the wafer or susceptor will result in a change in the size and shape of the target spot. The camera is configured to detect changes in the target spot size and shape. A logic circuit is provided at the output of the camera to correlate the observed shape and size of the target spot to a value indicative of the levelness of the susceptor and/or the inclination of a wafer located within the pocket of the susceptor. In another embodiment, the light beam is focused directly onto a surface of the susceptor. In this manner, the levelness and movement of the susceptor itself may be monitored.

Wafer out-of-pocket detector and susceptor leveling tool

An apparatus for monitoring the inclination of a wafer residing within a pocket of a semiconductor processing chamber susceptor. The apparatus of the present invention includes a laser beam source that is positioned to direct a laser beam onto the top surface of a wafer that has been positioned within a susceptor pocket. A laser receiver is positioned to detect the laser beam after it has been reflected off the surface of the wafer. The laser receiver emits an output signal to a visual or audible indicator that indicates whether or not the wafer is properly positioned within the pocket of the susceptor.

Wafer out-of-pocket detection tool

An apparatus and method for aligning various components of a semiconductor processing system is disclosed. A calibration tool positioned on the main body of the processing chamber is used to align the coordinates of the susceptor, wafer lifting pins, susceptor shaft, wafer handling blade and the rotational axis of the susceptor with that of the main body. By aligning the various components to a common coordinate system, it is possible to more precisely control the angular orientation of a wafer being processed with that of the processing gas flow.

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Sunnyvale, CA, United States of America

Shih-Hung Li