The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Jan. 18, 2002
Kevin Song, San Jose, CA (US);
Jallepally Ravi, Santa Clara, CA (US);
Shih-Hung Li, Sunnyvale, CA (US);
Liang-Yuh Chen, Foster City, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al O thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a monolayer of aluminum precursor is chemisorbed onto the substrate surface. Thereafter, non-chemisorbed aluminum precursor is purged from the processing chamber, followed by introduction of an oxygen precursor. The oxygen precursor reacts with the chemisorbed layer, resulting in a monolayer of Al O . Finally, excess oxygen precursor and by-products of the reaction are purged completing the sequential deposition cycle. The sequential deposition cycle can be repeated to grow the Al O film to a desired thickness.