Shih-Hsien Cheng

Title: Shih-Hsien Cheng: Innovator in Semiconductor Technology

Introduction

Shih-Hsien Cheng is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative semiconductor structures that enhance performance and efficiency.

Latest Patents

Cheng's latest patents include a semiconductor structure having enlarged regrowth regions and the manufacturing method of the same. This patent describes a semiconductor structure that features an insulation region with a top surface, a semiconductor fin protruding from this surface, and a gate positioned over the semiconductor fin. The regrowth region, which is partially located within the semiconductor fin, forms a source/drain region of the semiconductor structure. Notably, the profile of the regrowth region includes a girdle, with an upper girdle facet facing away from the insulation region and a lower girdle facet facing toward it. The angle between the upper girdle facet and the girdle exceeds approximately 54.7 degrees.

Career Highlights

Cheng is currently employed at Taiwan Semiconductor Manufacturing Company Ltd., a leading firm in the semiconductor industry. His work at this company has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Throughout his career, Cheng has collaborated with notable colleagues, including Chin-I Liao and Shih-Chieh Chang. These collaborations have fostered innovation and have been instrumental in the development of new semiconductor technologies.

Conclusion

Shih-Hsien Cheng is a key figure in semiconductor innovation, with a focus on enhancing semiconductor structures. His contributions through patents and collaborations continue to shape the future of technology in this field.