This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Shih Hao Wang and Complementary FET Innovation.
Introduction
Shih Hao Wang is an inventor associated with Hsinchu, Taiwan, and Taiwan Semiconductor Manufacturing Co., Ltd. His work includes semiconductor device technology, with a focus on complementary field-effect transistor structures.
Latest Patents
Wang is associated with 1 patent, titled “Complementary FET (CFET) Devices and Methods.” The patent describes forming a first transistor in one semiconductor device and bonding a second semiconductor device to it through an intervening bonding layer. A second transistor is then formed in the bonded device. The bonding layer lies between the two transistors’ gate electrodes, enabling a vertically integrated complementary FET arrangement.
Career Highlights
Wang’s listed patent reflects work on advanced transistor architectures and methods for integrating semiconductor devices through bonding. Such approaches are relevant to continued development of compact, high-performance semiconductor technologies.
Collaborations
Wang’s listed coworker is Jui-Chien Huang. The patent information also associates Wang with Taiwan Semiconductor Manufacturing Co., Ltd.
Conclusion
Shih Hao Wang’s patent on complementary FET devices and methods highlights his contribution to semiconductor integration and transistor design.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile