Hsinchu, Taiwan

Shih-Han Yu

This inventor holds 3 USPTO granted patents. Top assignees: Lite-On Semiconductor Corporation, Opto Tech Corporation. Active years: 2003-2018.


% Patents Active = 66.7

Average Co-Inventor Count = 3.8

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2003-2018

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3 patents (USPTO):Explore Patents

Title: Innovations of Inventor Shih-Han Yu

Introduction

Shih-Han Yu is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on advanced diode devices and super-junction semiconductor devices, showcasing his expertise in innovative manufacturing methods.

Latest Patents

One of his latest patents is a diode device and manufacturing method. This invention includes a substrate, an epitaxial layer, a trench gate structure, a Schottky diode structure, and a termination structure. The active region and termination region are defined in the epitaxial layer, with the Schottky diode structure and trench gate structure located in the active region. The termination structure features a termination trench formed in the epitaxial layer, along with a termination insulating layer, first and second spacers, and a first doped region. The termination insulating layer is conformingly formed on the inner walls of the termination trench, while the first and second spacers are positioned on the sidewalls of the trench. The first doped region, formed beneath the termination trench, has a conductive type that is reverse to that of the epitaxial layer.

Another significant patent is for a super-junction semiconductor device. This device comprises a substrate, a drift layer, a field insulator, a floating electrode layer, an isolation layer, and at least one transistor structure. The drift layer consists of a series of n-type and p-type pillars arranged in parallel to create a super-junction structure. The device defines an active region, a termination region, and a transition region within the drift layer. The field insulator covers the termination region and part of the transition region, while the floating electrode layer partially overlaps with the termination region. The transistor structure includes a source conductive layer that extends from the active region to the transition region, isolated from the floating electrode layer by the isolation layer.

Career Highlights

Shih-Han Yu has worked with prominent companies in the semiconductor industry, including Lite-On Semiconductor Corporation and Opto Tech Corporation. His experience in these organizations has contributed to his development as an inventor and innovator in the field.

Collaborations

Throughout his career, Shih-Han Yu has collaborated with talented individuals such as Chih-Wei Hsu and Ju-Hsu Chuang, who is

Profile summary based on public USPTO records.
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