The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Apr. 25, 2016
Lite-on Semiconductor Corp., New Taipei, TW;
Jia-Jan Guo, Hsinchu, TW;
Chih-Wei Hsu, Taipei, TW;
Ju-Hsu Chuang, Nantou County, TW;
Shih-Han Yu, Hsinchu, TW;
LITE-ON SEMICONDUCTOR CORP., New Taipei, TW;
Abstract
A super-junction semiconductor device is provided. The super-junction semiconductor device includes a substrate, a drift layer, a field insulator, a floating electrode layer, an isolation layer, and at least one transistor structure. The drift layer includes a plurality of n-type and p-type pillars alternately arranged in parallel to form a super-junction structure. An active region, a termination region and a transition region located therebetween are defined in the drift layer. The field insulator disposed on a surface of the drift layer covers the termination region and a portion of the transition region. The floating electrode layer disposed on the field insulator partially overlaps with the termination region. The transistor structure includes a source conductive layer extending from the active region to the transition region and superimposed on a portion of the floating electrode layer. The source conductive layer is isolated from the floating electrode layer by the isolation layer.