Ju-Hsu Chuang

Title: Innovations of Ju-Hsu Chuang

Introduction

Ju-Hsu Chuang is a notable inventor based in Nantou County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to diode and super-junction semiconductor devices.

Latest Patents

His latest patents include a diode device and manufacturing method, which features a substrate, an epitaxial layer, a trench gate structure, a Schottky diode structure, and a termination structure. This diode device is designed to enhance performance by defining an active region and a termination region within the epitaxial layer. The second patent is for a super-junction semiconductor device, which consists of a substrate, a drift layer, a field insulator, a floating electrode layer, an isolation layer, and at least one transistor structure. This device utilizes a super-junction structure formed by alternating n-type and p-type pillars, optimizing its efficiency and functionality.

Career Highlights

Ju-Hsu Chuang is currently associated with Lite-On Semiconductor Corporation, where he continues to develop cutting-edge technologies in the semiconductor industry. His work has been instrumental in advancing the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

He has collaborated with notable colleagues such as Chih-Wei Hsu and Shih-Han Yu, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Ju-Hsu Chuang's innovative work in semiconductor devices exemplifies the impact of dedicated inventors in advancing technology. His patents reflect a commitment to enhancing the performance and efficiency of electronic components.