Location History:
- Hsin-Chu, TW (2022)
- New Taipei, TW (2023)
Company Filing History:
Years Active: 2022-2025
Title: Innovations of Inventor Shih-Chung Hsiao in High-Voltage Integration Technologies
Introduction: Shih-Chung Hsiao is a prominent inventor based in Hsin-Chu, Taiwan, recognized for his contributions to integrated circuit technology. With two notable patents to his name, Hsiao has made significant strides in the field of high-voltage integration, demonstrating his expertise in semiconductor design and innovation.
Latest Patents: Hsiao's most recent patents focus on enhancing the performance and efficiency of integrated circuits. His patent titled "Boundary design for high-voltage integration on HKMG technology" describes an integrated circuit that incorporates a boundary region defined between a low voltage region and a high voltage region. This innovative design features an isolation structure situated in the boundary region of the substrate, along with a first polysilicon component located adjacent to the isolation structure. Additionally, it includes a boundary dielectric layer over the isolation structure, and a second polysilicon component is placed on the sacrifice dielectric layer. This technology is pivotal for advancements in high-voltage integrated circuits, showcasing Hsiao's innovative approach to semiconductor engineering.
Career Highlights: Hsiao is affiliated with Taiwan Semiconductor Manufacturing Company Ltd., a leading entity in the semiconductor industry. Throughout his career, he has focused on addressing the challenges associated with high-voltage integration in modern electronic devices. His work emphasizes the critical role of boundary designs in ensuring the reliability and performance of integrated circuits.
Collaborations: In his professional journey, Hsiao has collaborated with notable colleagues, including Yi-Huan Chen and Chien-Chih Chou. These partnerships have facilitated a dynamic exchange of ideas, further enhancing the innovation process within their projects and contributing to successful outcomes in integrated circuit development.
Conclusion: Shih-Chung Hsiao stands out as a remarkable inventor in the semiconductor landscape. His innovative patents and collaborative efforts underline his commitment to pushing the boundaries of technology in high-voltage integrated circuits. As advancements in this field continue to evolve, Hsiao's contributions will undoubtedly play a crucial role in shaping the future of electronic components.