Taiwan Semiconductor Manufacturing Comp. Ltd.

Shih-Chung Hsiao

Alexander Kalnitsky

Kong-Beng Thei

Ming Chyi Liu

Chien-Chih Chou

Yi-Huan Chen

Jhih-Bin Chen

The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed directly on an upper surface of the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.

Boundary design for high-voltage integration on HKMG technology

The present disclosure relates to an integrated circuit (IC) that includes a boundary region defined between a low voltage region and a high voltage region, and a method of formation. In some embodiments, the integrated circuit comprises an isolation structure disposed in the boundary region of the substrate. A first polysilicon component is disposed over the substrate alongside the isolation structure. A boundary dielectric layer is disposed on the isolation structure. A second polysilicon component is disposed on the sacrifice dielectric layer.

Growing community of inventors

Hsin-Chu, Taiwan

Shih-Chung Hsiao