Tokyo, Japan

Shigeyoshi Ootsuki

This inventor holds 9 USPTO granted patents. Top assignee: Nec Corporation. Active years: 2000-2003.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeyoshi Ootsuki. Retrieved from https://idiyas.com/inventor/shigeyoshi-ootsuki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 3

Forward Citations = 61(Granted Patents)


Company Filing History:


Years Active: 2000-2003

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9 patents (USPTO):Explore Patents

Title: Shigeyoshi Ootsuki: Innovator in Semiconductor Technology

Introduction

Shigeyoshi Ootsuki is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 9 patents. His work has been instrumental in advancing manufacturing processes and device efficiency.

Latest Patents

Among his latest innovations are patents related to shadow masks. These include a method of forming the shadow mask and a method of manufacturing a semiconductor device using the shadow mask. These patents reflect his commitment to enhancing semiconductor fabrication techniques.

Career Highlights

Shigeyoshi Ootsuki is currently employed at NEC Corporation, a leading technology company in Japan. His role at NEC has allowed him to collaborate on various projects that push the boundaries of semiconductor technology. His expertise has been vital in developing new methods that improve production efficiency and device performance.

Collaborations

Throughout his career, Ootsuki has worked alongside talented colleagues such as Shinichi Fukuzawa and Kazuhiro Mizutani. Their collaborative efforts have led to innovative solutions in the semiconductor industry.

Conclusion

Shigeyoshi Ootsuki's contributions to semiconductor technology through his patents and collaborations highlight his importance in the field. His work continues to influence advancements in manufacturing processes and device efficiency.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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