Shigetoshi Sota

Title: Shigetoshi Sota: Innovator in Semiconductor Technology

Introduction

Shigetoshi Sota is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on the development of advanced semiconductor devices, modules, and packaged semiconductor devices.

Latest Patents

Among his latest patents, Sota has developed a semiconductor device that includes a semiconductor substrate with a first conductivity-type impurity. This device features a low-concentration impurity layer, a backside electrode made of metal material, and first and second transistors situated within the low-concentration impurity layer. The first transistor is equipped with a first source electrode and a first gate electrode, while the second transistor has a second source electrode and a second gate electrode. Notably, the semiconductor substrate serves as a common drain region for both transistors. The thickness of the backside electrode ranges from 25 to 35 μm, and the ratio of the thickness of the backside electrode to the thickness of the semiconductor layer is 0.32 or more.

Career Highlights

Shigetoshi Sota has worked with notable companies in the technology sector, including Nuvoton Technology Corporation Japan and Panasonic Intellectual Property Management Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Sota has collaborated with talented individuals such as Toshikazu Imai and Ryosuke Okawa. These collaborations have contributed to the advancement of his projects and the successful development of his patents.

Conclusion

Shigetoshi Sota is a distinguished inventor whose work in semiconductor technology has led to multiple patents and significant advancements in the field. His contributions continue to influence the industry and inspire future innovations.