Higashimurayama, Japan

Shigeo Ogasawara

This inventor holds 3 USPTO granted patents. Top assignee: Hitachi, Ltd.. Active years: 1999-2000.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeo Ogasawara. Retrieved from https://idiyas.com/inventor/shigeo-ogasawara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 3

Forward Citations = 53(Granted Patents)


Location History:

  • Higashimurayama, JP (1999)
  • Higashiyamato, JP (2000)

Company Filing History:


Years Active: 1999-2000

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3 patents (USPTO):Explore Patents

Title: Shigeo Ogasawara: Innovator in Semiconductor Technology

Introduction

Shigeo Ogasawara is a prominent inventor based in Higashimurayama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Ogasawara's latest patents include a method of manufacturing through holes in a semiconductor device. This method involves forming first through holes of a relatively small diameter and second through holes of a relatively great diameter in a first layer insulating film. The second through holes are designed to be tapered toward a layer underlying the first layer insulating film. The process begins with the formation of the first through holes, which are then filled with plug electrodes before the second through holes are created. The filling process includes etching back a first conductive film to ensure proper filling of the first through holes, while also removing residues from the side walls of the second through holes.

Another notable patent is for a semiconductor integrated circuit that features three or more layers of wiring. This design includes a plurality of lines of bonding pads arranged along the outer peripheral portion of a semiconductor chip. The bonding pads are arranged in a zigzag manner, facilitating efficient electrical connections between the bonding pads and internal circuits. The innovative wiring structure enhances the performance and reliability of semiconductor devices.

Career Highlights

Shigeo Ogasawara is associated with Hitachi, Ltd., a leading company in the technology sector. His work at Hitachi has allowed him to contribute to advancements in semiconductor technology, making a lasting impact on the industry.

Collaborations

Throughout his career, Ogasawara has collaborated with notable colleagues, including Tadayasu Miki and Shigeru Takahashi. These collaborations have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.

Conclusion

Shigeo Ogasawara's contributions to semiconductor technology through his patents and work at Hitachi, Ltd. highlight his role as a key innovator in the industry. His advancements continue to influence the development of modern electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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