Shigeki Kudomi

Title: Shigeki Kudomi: Innovator in Semiconductor Technology

Introduction

Shigeki Kudomi is a notable inventor based in Ampachi-gun, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. His innovative work has led to advancements that enhance the efficiency of light output in semiconductor devices.

Latest Patents

Kudomi holds a patent for a semiconductor light-emitting device with a depletion layer. This device features a p-Si diffusion layer formed on a silicon substrate, with an n-Si diffusion layer integrated within it. An n-GaAs layer, which serves as the active region for light emission, is grown on the p-Si diffusion layer and the n-Si diffusion layer. Additionally, a p-GaAs layer is grown on the n-GaAs layer, completing the structure necessary for effective light emission. The design allows for current injection from an upper electrode, facilitating light emission from a specific region of the pn junction, while minimizing attenuation by the upper electrode.

Career Highlights

Kudomi is associated with Nippondenso Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also positioned him as a key figure in the industry.

Collaborations

Throughout his career, Kudomi has collaborated with talented individuals such as Naomi Awano and Hajime Inuzuka. These partnerships have fostered innovation and have been crucial in the development of his patented technologies.

Conclusion

Shigeki Kudomi's contributions to semiconductor technology, particularly through his patented light-emitting device, highlight his role as an influential inventor. His work continues to impact the field, showcasing the importance of innovation in advancing technology.