The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 1997
Filed:
Oct. 19, 1995
Naomi Awano, Nagoya, JP;
Hajime Inuzuka, Nishio, JP;
Masahito Mizukoshi, Nagoya, JP;
Shigeki Kudomi, Ampachi-gun, JP;
Nippondenso Co., Ltd., Kariya, JP;
Abstract
A semiconductor device having superior light output efficiency is disclosed. A p-Si diffusion layer is formed on a Si substrate and an n-Si diffusion layer is formed in the p-Si diffusion layer. An n-GaAs layer constituting an active region for emitting light is grown on the p-Si diffusion layer and the n-Si diffusion layer of the Si substrate and a p-GaAs layer constituting an active region for emitting light is grown on the n-GaAs layer. An upper electrode is disposed on an upper surface of the p-GaAs layer above the p-Si diffusion layer. Current is injected from the upper electrode through a region of the pn junction between the n-GaAs layer and the p-GaAs layer other than that directly below the upper electrode, and light is emitted from this region. The emitted light passes through the p-GaAs layer to outside the device without passing through and being attenuated by the upper electrode.