Nagoya, Japan

Naomi Awano

This inventor holds 3 USPTO granted patents and 3 published patent applications. Top assignee: Nippondenso Co., Ltd.. Active years: 1996-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naomi Awano. Retrieved from https://idiyas.com/inventor/naomi-awano-j9d1lr7f

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 48(Granted Patents)


Company Filing History:


Years Active: 1996-1997

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3 patents (USPTO):Explore Patents

Title: **Naomi Awano: Innovator in Semiconductor Technology**

Introduction

Naomi Awano, an accomplished inventor based in Nagoya, Japan, has made significant contributions to the field of semiconductor technology. With a total of three patents to her name, Awano's innovations demonstrate a commitment to advancing electronic devices' efficiency and integration.

Latest Patents

Among her latest patents, Awano developed a **monolithic photocoupler**, designed to facilitate easier integration. This device features a silicon substrate with an SOI structure, incorporating trench insulation layers that segment the semiconductor single crystal into distinct regions. The design includes light-emitting elements formed from GaAs-based light-emitting diodes on one of these regions, while light-receiving elements occupy another. The incorporation of optical waveguides made from optically transparent and electrically insulative materials, such as TiO₂ films, ensures that the emitted light is efficiently directed to the receiving elements without unnecessary leakage.

Another noteworthy invention is her **semiconductor light-emitting device with a depletion layer**, which boasts enhanced light output efficiency. This device employs a p-Si diffusion layer on a silicon substrate, combined with an n-Si diffusion layer that allows for the growth of n-GaAs and p-GaAs layers as active regions for light emission. This innovative structure enables light to emit without attenuation, reaffirming Awano's expertise in optimizing semiconductor performance.

Career Highlights

Awano's career is marked by her association with **Nippondenso Co., Ltd.**, where she plays a vital role in research and development within the semiconductor division. Her work has been pivotal in creating devices that enhance the capabilities of modern electronics, making her a valuable asset to the company.

Collaborations

Throughout her career, Naomi Awano has collaborated with notable colleagues, including Hajime Inuzuka and Masahito Mizukoshi. These partnerships have fostered a creative environment that has led to the development of cutting-edge semiconductor technologies.

Conclusion

Naomi Awano is an inspiring figure in the realm of semiconductor innovations. Her dedication to creating efficient and integrative technologies through her patents exemplifies her commitment to advancing the field. As she continues her work at Nippondenso Co., Ltd., there is no doubt that her impact on the industry will be profound and lasting.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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