This inventor holds 1 USPTO granted patent. Top assignee: Nagoya University. Active years: 2006.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2006
Title: Shigeaki Zaima: Innovator in High Dielectric Constant Metallic Oxides
Introduction
Shigeaki Zaima is a notable inventor based in Kasugai, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of metallic oxides with high dielectric constants. His innovative work has implications for the development of advanced electronic devices.
Latest Patents
Zaima holds a patent for a method of fabricating a metallic oxide of high dielectric constant. This patent includes a detailed process where a metallic oxide film is epitaxially grown on a substrate. The substrate and the metallic oxide film undergo thermal treatment to mix the constituent elements, resulting in a high dielectric constant metallic oxide film formed through this mixing process. He has 1 patent to his name.
Career Highlights
Shigeaki Zaima is affiliated with Nagoya University, where he conducts research and development in semiconductor materials. His work has been instrumental in advancing the understanding and application of high dielectric constant materials in electronics.
Collaborations
Zaima has collaborated with notable colleagues, including Akira Sakai and Mitsuo Sakashita. Their combined expertise has contributed to the success of various research projects and innovations in the field.
Conclusion
Shigeaki Zaima's contributions to the field of semiconductor technology through his innovative patent work highlight his role as a key inventor. His research continues to influence advancements in electronic materials and devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile