The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7030000 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 18, 2006

Filed:

Mar. 24, 2004
Applicants:

Akira Sakai, Nagoya, JP;

Yukio Yasuda, Aichi-gun, JP;

Shigeaki Zaima, Kasugai, JP;

Mitsuo Sakashita, Nagoya, JP;

Hiroki Kondo, Nagoya, JP;

Shinsuke Sakashita, Nagoya, JP;

Inventors:

Akira Sakai, Nagoya, JP;

Yukio Yasuda, Aichi-gun, JP;

Shigeaki Zaima, Kasugai, JP;

Mitsuo Sakashita, Nagoya, JP;

Hiroki Kondo, Nagoya, JP;

Shinsuke Sakashita, Nagoya, JP;

Assignee:

Nagoya University, Nagoya, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 29/772 (2006.01);
U.S. Cl.
CPC ...
Abstract

A given metallic oxide film is epitaxially grown on a substrate. Then, the substrate and the metallic oxide film are thermally treated to mix the constituent elements of the substrate with the constituent metallic oxide elements of the metallic oxide film and to form a metallic oxide film of high dielectric constant on the substrate through the mixing of the constituent elements.


Find Patent Forward Citations

Sakai, Akira. (2006). Method for fabricating a metallic oxide of high dielectric constant, metallic oxide of high dielectric constant, gate insulating film and semiconductor element (U.S. Patent No. 7030000). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7030000

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