Location History:
- Hyogo-ken, JP (2014)
- Tokyo, JP (2013 - 2016)
- Himeji Hyogo, JP (2018)
- Kanazawa Ishikawa, JP (2018 - 2020)
- Kanazawa, JP (2023)
Company Filing History:
7 out of 52,751 
2 out of 1,514 Years Active: 2013-2023
Title: Shigeaki Hayase: Innovator in Semiconductor Technology
Introduction
Shigeaki Hayase is a prominent inventor based in Kanazawa, Ishikawa, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of seven patents. His work has been instrumental in advancing the capabilities of semiconductor devices.
Latest Patents
One of Hayase's latest patents is for a trench gate IGBT with a carrier trap under the control electrode. This semiconductor device features a complex structure that includes multiple layers and electrodes, designed to enhance performance and efficiency. Another notable patent is for a semiconductor device and power converter, which incorporates a cooling medium to improve thermal management between the electrode plates and the semiconductor chip.
Career Highlights
Throughout his career, Shigeaki Hayase has worked with notable companies such as Kabushiki Kaisha Toshiba and Toshiba Electronic Devices & Storage Corporation. His experience in these organizations has allowed him to develop innovative solutions in semiconductor technology.
Collaborations
Hayase has collaborated with talented individuals in the field, including Nobuyuki Sato and Yusuke Kawaguchi. These partnerships have contributed to the success of his projects and the advancement of semiconductor technology.
Conclusion
Shigeaki Hayase's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry and pave the way for future innovations.