Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Shigeaki Hayase

Nobuyuki Sato

Yoshihiro Yamaguchi

Yusuke Kawaguchi

Kentaro Ichinoseki

Miwako Akiyama

Takeru Matsuoka

Hiroshi Matsuyama

Ryohei Gejo

Akiyo Minamikawa

A semiconductor device includes a semiconductor part, first and second electrodes, a control electrode and a control interconnect. The semiconductor part includes first to sixth layers and is provided between the first and second electrodes. The second layer is provided between the first layer and the second electrode. The third layer is provided between the second layer and the second electrode. The fourth and fifth layers are arranged between the first layer and the first electrode. The second electrode and the control interconnect are arranged on the semiconductor part. The control electrode is provided between the second electrode and the semiconductor part. The sixth layer is provided between the first layer and the control interconnect. The fifth semiconductor layer is provided between the first electrode and the sixth layer. The first semiconductor layer includes a carrier trap provided between the fifth and sixth layers.

Trench gate IGBT with carrier trap under the control electrode

A semiconductor device includes a first electrode plate, a second electrode plate disposed to oppose the first electrode plate, and a semiconductor chip disposed between the first electrode plate and the second electrode plate. At least one of the first electrode plate and the second electrode plate has a space where a cooling medium circulates.

Semiconductor device and power convertor

According to one embodiment, a semiconductor device includes a semiconductor layer; a plurality of semiconductor regions; second semiconductor region; a first electrode being positioned between the plurality of first semiconductor regions, the first electrode contacting with the semiconductor layer, each of the plurality of first semiconductor regions, and the second semiconductor region via a first insulating film; a second electrode provided below the first electrode, and contacting with the semiconductor layer via a second insulating film; an insulating layer interposed between the first electrode and the second electrode; a third electrode electrically connected to the semiconductor layer; and a fourth electrode connected to the second semiconductor region. The first electrode has a first portion and a pair of second portions. And each of the pair of second portions is provided along the first insulating film.

Semiconductor device and manufacturing method of the same

A semiconductor device includes first and second conductive layers on a substrate and separated from each other. A first semiconductor chip is mounted on the first conductive layer and has a first electrode on a side opposite the first conductive layer. A second semiconductor chip is mounted on the first conductive layer and has a second electrode on a side opposite the first conductive layer. A first metal member is mounted on the first electrode. A second metal member is mounted on the second electrode. A metal plate has a first portion disposed on the first and second metal members, and a second portion connected to the second conductive layer. The metal plate electrically connects the first and second electrodes to the second conductive layer through the first and second metal members.

Semiconductor device including semiconductor chips electrically connected via a metal plate

A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.

Growing community of inventors

Kanazawa Ishikawa, Japan

Shigeaki Hayase