The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2013

Filed:

Mar. 20, 2009
Applicants:

Yusuke Kawaguchi, Kanagawa-ken, JP;

Miwako Akiyama, Tokyo, JP;

Yoshihiro Yamaguchi, Saitama-ken, JP;

Nobuyuki Sato, Kanagawa-ken, JP;

Shigeaki Hayase, Tokyo, JP;

Inventors:

Yusuke Kawaguchi, Kanagawa-ken, JP;

Miwako Akiyama, Tokyo, JP;

Yoshihiro Yamaguchi, Saitama-ken, JP;

Nobuyuki Sato, Kanagawa-ken, JP;

Shigeaki Hayase, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes: a semiconductor substrate of a first conductivity type; a semiconductor region provided in the semiconductor substrate; a first trench formed in the semiconductor region; a second trench formed in the semiconductor substrate; a trench gate electrode provided in the first trench; and a trench source electrode provided in the second trench. The trench source electrode is shaped like a stripe and connected to the source electrode through its longitudinal portion.


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