Taipei, Taiwan

Shie-Heng Lee

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignee: Teco Nanotech Co., Ltd.. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shie-Heng Lee. Retrieved from https://idiyas.com/inventor/shie-heng-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

Average Co-Inventor Count = 2.5

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2006

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3 patents (USPTO):Explore Patents

Title: Innovations of Shie-Heng Lee in Carbon Nanotube Technology

Introduction

Shie-Heng Lee is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of nanotechnology, particularly in the development of carbon nanotube processes for electronic devices. With a total of three patents to his name, Lee's work is at the forefront of innovation in this rapidly evolving industry.

Latest Patents

One of Shie-Heng Lee's latest patents is the "Patterned Carbon Nanotube Process." This innovative process involves coating a negative photoresist layer on a cathode substrate. A mask layer is then formed with a carved cavity during the development process. A carbon nanotube spray is applied to fill the carved cavity with multiple carbon nanotubes. The cathode substrate undergoes sintering at high temperatures or in a vacuum to remove the mask layer and part of the carbon nanotubes adhered to it. This process effectively connects the remaining carbon nanotubes to the cathode conductive layer, creating an electron emitter layer with high resolution, which enhances current density and uniformity of illumination in electronic devices.

Another significant patent is the "Method for Fabricating Mesh of Tetraode Field-Emission Display." This method discloses a mesh structure for a tetraode field-emission display, featuring a tri-layer structure that includes a gate layer, an insulation layer, and a converging electrode layer. The converging electrode layer is made from a metal conductive plate with multiple apertures. The insulation layer is coated on this layer, and a gate is formed on top of the insulation layer, showcasing Lee's innovative approach to display technology.

Career Highlights

Shie-Heng Lee is currently associated with Teco Nanotech Co., Ltd., where he continues to push the boundaries of nanotechnology. His work has garnered attention for its potential applications in various electronic devices, making him a key figure in the industry.

Collaborations

Lee collaborates with talented individuals such as Kuei-Wen Cheng and Shih-Hsun Chen, who contribute to the innovative environment at Teco Nanotech Co., Ltd. Their combined expertise fosters a culture of creativity and advancement in nanotechnology.

Conclusion

Shie-Heng Lee's contributions to carbon nanotube technology and electronic devices highlight his role as a leading inventor in the field. His innovative patents and collaborative efforts continue to

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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