The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2006
Filed:
Jun. 04, 2004
Shih-hsun Chen, Taipei, TW;
Chun-yen Hsiao, Taipei, TW;
Shih-chien Hsiao, Taipei, TW;
Shie-heng Lee, Taipei, TW;
Kuei-wen Cheng, Taipei, TW;
Shih-Hsun Chen, Taipei, TW;
Chun-Yen Hsiao, Taipei, TW;
Shih-Chien Hsiao, Taipei, TW;
Shie-Heng Lee, Taipei, TW;
Kuei-Wen Cheng, Taipei, TW;
Teco Nanotech Co., Ltd., Taipei, TW;
Abstract
A patterned carbon nanotube process adopted for an electronic device is described. A negative photoresist layer is coated on a cathode substrate. A mask layer is formed with a carved cavity therein during a development process. A carbon nanotube spray is sprayed thereon to fill the carved cavity with a plurality of carbon nanotubes. The cathode substrate is sintered at a high temperature or in a vacuum to remove the mask layer and part of the carbon nanotubes adhered to the mask layer simultaneously, and to connect the rest of the carbon nanotubes firmly to the cathode conductive layer as an electron emitter layer with high resolution for increasing current density and uniformity of illumination of the electronic device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile