Hangzhou City, China

Shida Dong

This inventor holds 1 USPTO granted patent. Top assignee: Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shida Dong. Retrieved from https://idiyas.com/inventor/shida-dong-z272fa5r

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shida Dong - Innovator in Semiconductor Technology

Introduction

Shida Dong is a prominent inventor based in Hangzhou City, China. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent related to split-gate MOSFETs. Her work is instrumental in advancing the efficiency and effectiveness of semiconductor devices.

Latest Patents

Shida Dong holds a patent for a split-gate MOSFET and its manufacturing method. This patent discloses a process that includes forming a first trench in a semiconductor layer and a second trench that communicates with the first trench. The method involves creating dielectric layers and conductors that enhance the performance of the MOSFET. This innovation expands the process window and facilitates the formation of a third dielectric layer, which is crucial for the device's functionality.

Career Highlights

Shida Dong is currently employed at Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd. Her role at the company allows her to apply her expertise in semiconductor technology and contribute to the development of cutting-edge solutions in the industry.

Collaborations

Shida collaborates with talented coworkers, including Jinyong Cai and Jiakun Wang. Their combined efforts in research and development foster an environment of innovation and creativity within the company.

Conclusion

Shida Dong's contributions to semiconductor technology through her patent on split-gate MOSFETs exemplify her role as a leading inventor in the field. Her work not only enhances the capabilities of semiconductor devices but also paves the way for future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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