The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2026
Filed:
Dec. 28, 2022
Hangzhou Silicon-magic Semiconductor Technology Co., Ltd., Hangzhou City, CN;
Silicon-Magic Semiconductor Technology (Hangzhou) Co., Ltd., Hangzhou, CN;
Abstract
Disclosed is a split-gate MOSFET and a manufacturing method, including: forming a first trench in a semiconductor layer; forming a second trench communicated with the first trench by using the first trench; forming a first dielectric layer in the second trench, a second dielectric layer in the first trench; forming a first conductor, located in the second trench, isolated from the semiconductor layer by the first dielectric layer; forming a third dielectric layer covering the first conductor; forming a second conductor, located in the first trench, isolated from the semiconductor layer by the second dielectric layer, the first conductor being isolated from the second conductor by the third dielectric layer; forming a body region adjacent to the first trench, the first trench has an inner diameter greater than that of the second trench. Thus, process window is expanded and beneficial to forming the third dielectric layer.