Company Filing History:
Years Active: 2025
Title: Innovations by Inventor Shi-Sheng Hu
Introduction: Shi-Sheng Hu is an innovative inventor based in Tainan City, Taiwan. She has made significant contributions to the field of semiconductor technology. Although she currently holds no granted patents, her work in developing advanced semiconductor structures showcases her expertise and creativity.
Latest Patent Applications: Shi-Sheng Hu's latest patent applications include "HETEROSTRUCTURE CHANNEL LAYER FOR SEMICONDUCTOR DEVICES." This application describes a semiconductor structure featuring a heterostructure channel layer, which includes a substrate and a fin structure. The fin structure comprises a channel layer and a bottom layer, with the channel layer having first, second, and third portions. The first and third portions share the same material as the bottom layer, while the second portion utilizes a different material. Additionally, the semiconductor structure incorporates first and second source/drain structures adjacent to the channel layer.
Another notable application is "SEMICONDUCTOR STRUCTURE WITH AIR SPACER AND METHOD FOR FORMING THE SAME." This application outlines a method for creating a semiconductor structure by forming a fin structure over a substrate. The fin structure consists of alternating first and second semiconductor layers. The method includes laterally recessing the first semiconductor layers to create notches, forming inner spacers, and growing a source/drain feature over the fin structure. The resulting structure features air spacers sealed by the source/drain feature and inner spacers.
Conclusion: Shi-Sheng Hu's innovative approaches to semiconductor structures highlight her potential in the field. Her latest patent applications reflect her commitment to advancing technology and her role as a pioneering inventor.