The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 02, 2025
Filed:
Jun. 06, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a semiconductor structure having a heterostructure channel layer. The semiconductor structure includes a substrate and a fin structure on the substrate. The fin structure includes a channel layer and a bottom layer between the channel layer and the substrate. The channel layer includes first, second, and third portions on top of the bottom layer. The first and third portions include the same material as the bottom layer. The second portion includes a material different from the bottom layer. The semiconductor structure further includes first and second source/drain structures on the bottom layer and adjacent to the channel layer. The first source/drain structure is in contact with the first portion of the channel layer. The second source/drain structure is in contact with the third portion of the channel layer.