Portland, OR, United States of America

Shi-Ning Yang


Average Co-Inventor Count = 4.5

ph-index = 5

Forward Citations = 112(Granted Patents)


Company Filing History:


Years Active: 1993-1999

Loading Chart...
5 patents (USPTO):Explore Patents

Title: Innovations by Shi-Ning Yang

Introduction

Shi-Ning Yang is a prominent inventor based in Portland, OR (US). She has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. Her work focuses on enhancing the reliability and performance of semiconductor devices.

Latest Patents

One of her latest patents is titled "Guard wall to reduce delamination effects within a semiconductor die." This invention describes a method of forming a guard wall for a semiconductor die, which involves depositing a dielectric layer over a semiconductor substrate. The dielectric layer is then patterned to create a guard wall opening adjacent to an electrically active region of the die. The design ensures that no straight line segments greater than about 10 µm long are present in the guard wall opening. Additionally, a first layer is deposited over the substrate and etched to form a sidewall spacer along the guard wall opening. A second layer is deposited within the guard wall opening to complete the guard wall.

Another notable patent is "Via hole profile and method of fabrication." This invention presents a novel high-performance interconnection structure aimed at preventing via delamination. The interconnection structure includes a via connection that extends into and undercuts an underlying interconnection line, effectively locking the via connection into the interconnection line.

Career Highlights

Shi-Ning Yang is currently employed at Intel Corporation, where she continues to innovate in semiconductor technology. Her work has been instrumental in advancing the reliability and efficiency of semiconductor devices.

Collaborations

Throughout her career, Shi-Ning has collaborated with notable colleagues, including Alan M Myers and Peter K Charvat. These collaborations have further enriched her contributions to the field.

Conclusion

Shi-Ning Yang's innovative work in semiconductor technology has led to significant advancements in the industry. Her patents reflect her commitment to improving the performance and reliability of semiconductor devices.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…