Beijing, China

Shengyu Bao

This inventor holds 1 USPTO granted patent. Top assignee: Peking University. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shengyu Bao. Retrieved from https://idiyas.com/inventor/shengyu-bao

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Shengyu Bao and Three-Dimensional Memory Technology.

Introduction

Shengyu Bao is an inventor associated with Peking University in Beijing, China. His patent work includes a three-dimensional memory array and a method for preparing it.

Latest Patents

Bao is credited with 1 patent: “Three-Dimensional Memory Array and Preparation Method Thereof.” The disclosure describes memory cells arranged in an array, with each cell connected between a word line and a bit line. A gating transistor is positioned beneath each word line, with its drain connected to the word line, its gate connected to a gate line, and its source connected to a source line. The bit, word, source, and gate lines work together to control the state of each memory cell.

Career Highlights

Bao’s listed patent reflects work on three-dimensional memory architecture and its fabrication. His affiliation with Peking University connects this invention to research and development in an academic setting.

Collaborations

Bao’s listed coworkers include Yimao Cai and Zongwei Wang.

Conclusion

Shengyu Bao’s patent describes an array-based memory design that uses coordinated bit lines, word lines, source lines, and gate lines to control memory cells.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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