This inventor holds 1 USPTO granted patent. Top assignee: Peking University. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Shengyu Bao and Three-Dimensional Memory Technology.
Introduction
Shengyu Bao is an inventor associated with Peking University in Beijing, China. His patent work includes a three-dimensional memory array and a method for preparing it.
Latest Patents
Bao is credited with 1 patent: “Three-Dimensional Memory Array and Preparation Method Thereof.” The disclosure describes memory cells arranged in an array, with each cell connected between a word line and a bit line. A gating transistor is positioned beneath each word line, with its drain connected to the word line, its gate connected to a gate line, and its source connected to a source line. The bit, word, source, and gate lines work together to control the state of each memory cell.
Career Highlights
Bao’s listed patent reflects work on three-dimensional memory architecture and its fabrication. His affiliation with Peking University connects this invention to research and development in an academic setting.
Collaborations
Bao’s listed coworkers include Yimao Cai and Zongwei Wang.
Conclusion
Shengyu Bao’s patent describes an array-based memory design that uses coordinated bit lines, word lines, source lines, and gate lines to control memory cells.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
