Kaohsiung, Taiwan

Sheng-Yang Peng


Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2004-2013

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5 patents (USPTO):Explore Patents

Title: Innovations of Sheng-Yang Peng

Introduction

Sheng-Yang Peng is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor engineering, holding a total of 5 patents. His work focuses on innovative processes that enhance the efficiency and precision of semiconductor fabrication.

Latest Patents

Among his latest patents is a process for fabricating a chip. This chip structure includes a substrate and a stress buffer layer, where the substrate has a first surface and a second surface opposite to the first surface. The stress buffer layer is strategically disposed on the periphery of the substrate and is located in at least one of the first surface and the second surface of the substrate. Another notable patent is a wafer sawing method that utilizes a cutting tool for sawing a wafer. This method involves forming sawing paths on the surface of the wafer and using a carrier with strip-shaped adhesives or fiducial marks to ensure precise positioning during the sawing process. This innovative approach provides a precise and rapid sawing process, achieving superior productive yield.

Career Highlights

Sheng-Yang Peng is currently employed at Advanced Semiconductor Engineering, Inc., where he continues to develop cutting-edge technologies in semiconductor manufacturing. His expertise and innovative mindset have positioned him as a key player in the industry.

Collaborations

He has collaborated with notable coworkers, including Tsung-Yueh Tsai and Meng-Jen Wang, contributing to various projects that advance semiconductor technology.

Conclusion

Sheng-Yang Peng's contributions to semiconductor engineering through his patents and innovative methods highlight his importance in the field. His work continues to influence the industry, paving the way for future advancements in technology.

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