Sheng Peng

Title: Innovations of Sheng Peng in Three-Dimensional Memory Devices

Introduction

Sheng Peng is a notable inventor based in Wuhan, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional (3D) NAND memory devices. His innovative approach has led to advancements that enhance the performance and efficiency of memory storage solutions.

Latest Patents

Sheng Peng holds a patent for a three-dimensional memory device and its fabrication method. This patent outlines a fabrication method that includes forming a conductor/insulator stack over a substrate. It also describes the formation of a dielectric layer of a dielectric material that includes atomic hydrogen over a part of the conductor/insulator stack. The process involves performing a thermal treatment to release the atomic hydrogen from the dielectric material and diffuse it into the conductor/insulator stack. This innovation is crucial for improving the functionality of 3D NAND memory devices.

Career Highlights

Sheng Peng is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this leading technology company has positioned him at the forefront of memory device innovation. With a focus on enhancing memory technology, he has contributed to the development of advanced solutions that meet the growing demands of data storage.

Collaborations

Sheng Peng has collaborated with talented professionals in his field, including Zhiyong Lu and Kai Yu. These collaborations have fostered an environment of innovation and creativity, leading to the development of cutting-edge memory technologies.

Conclusion

Sheng Peng's contributions to the field of three-dimensional memory devices exemplify the importance of innovation in technology. His patent and work at Yangtze Memory Technologies Co., Ltd. highlight his role as a key player in advancing memory storage solutions. The impact of his inventions will continue to shape the future of data storage technology.