This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Sheng-Hsun Fu: Innovator in Semiconductor Manufacturing
Introduction
Sheng-Hsun Fu is an inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor manufacturing. His innovative approach focuses on the method of manufacturing semiconductor devices, which is crucial for the advancement of technology.
Latest Patent Applications
Sheng-Hsun Fu has filed a patent application titled "METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE." This application details a method that involves forming an n-type source/drain epitaxial layer and a p-type source/drain epitaxial layer. A dielectric layer is created over these layers, with specific openings formed to expose parts of each layer. The method also includes a unique aspect where the recessing amount of the n-type source/drain epitaxial layer differs from that of the p-type source/drain epitaxial layer.
Conclusion
Sheng-Hsun Fu's work in semiconductor device manufacturing showcases his innovative spirit and dedication to advancing technology. His contributions, although not yet reflected in granted patents, hold promise for future developments in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile