Sheng He Huang

Title: Innovations by Sheng He Huang

Introduction

Sheng He Huang is a notable inventor based in Singapore, recognized for his contributions to the field of non-volatile memory technologies. With a total of three patents to his name, he has made significant advancements in memory cell structures and fabrication methods.

Latest Patents

One of his latest patents is titled "Non-volatile memory cell structure and a method of fabricating the same." This invention involves a method that includes fabricating a portion of a floating gate from one or more first metal local interconnection layer (LIL) slit contacts deposited on a patterned dielectric layer. Additionally, it describes the fabrication of a portion of a control gate from one or more second metal LIL slit contacts, which together form a capacitive structure between the floating gate and the control gate. Another significant patent is the "EEPROM cell structure and a method of fabricating the same." This patent details an electrically erasable programmable read-only memory (EEPROM) cell structure that includes a substrate with two shallow trench isolation (STI) structures, an intermediate patterned layer, and a floating gate bridging between the STI structures.

Career Highlights

Sheng He Huang has worked with prominent companies such as Systems on Silicon Manufacturing Company and Trustcopy Pte Ltd. His experience in these organizations has contributed to his expertise in memory technologies and fabrication processes.

Collaborations

Some of his notable coworkers include Jian Wu and Eng Keong Ho, who have collaborated with him on various projects throughout his career.

Conclusion

Sheng He Huang's innovative work in memory cell structures and fabrication methods has made a significant impact in the field of technology. His patents reflect his dedication to advancing memory technology, and his collaborations with industry professionals further enhance his contributions.