The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 22, 2013

Filed:

Jan. 13, 2011
Applicants:

Sheng He Huang, Singapore, SG;

Eng Keong Ho, Singapore, SG;

Ping Yaw Peh, Singapore, SG;

Inventors:

Sheng He Huang, Singapore, SG;

Eng Keong Ho, Singapore, SG;

Ping Yaw Peh, Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrically erasable programmable read only memory (EEPROM) cell structure and a method of fabricating the same. The EEPROM cell comprising a substrate comprising two shallow trench isolation (STI) structures separated by a substrate portion; an intermediate patterned layer formed on the substrate such that the patterned layer covers respective portions of each STI structure; a floating gate bridging between the STI structures such that the floating gate extends over the intermediate patterned layer; a dielectric layer formed over the floating gate; and a control gate formed over the dielectric layer.


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