Sheng-Han Yi

Title: Innovations of Sheng-Han Yi

Introduction

Sheng-Han Yi is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on innovative methods for semiconductor device fabrication.

Latest Patents

One of his latest patents is titled "Semiconductor device and forming method thereof." This method includes forming source/drain regions in a semiconductor substrate, depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region, forming a titanium oxide layer in contact with the zirconium-containing oxide layer, and forming a top electrode over the zirconium-containing oxide layer. Notably, no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.

Career Highlights

Sheng-Han Yi has worked with notable organizations such as Taiwan Semiconductor Manufacturing Company Ltd. and National Taiwan University. His experience in these institutions has allowed him to develop and refine his innovative approaches to semiconductor technology.

Collaborations

Some of his coworkers include Miin-Jang Chen and Chen-Hsuan Lu. Their collaborative efforts have contributed to advancements in the semiconductor field.

Conclusion

Sheng-Han Yi's contributions to semiconductor technology through his patents and career highlights demonstrate his commitment to innovation in this critical area. His work continues to influence the development of advanced semiconductor devices.