The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2025
Filed:
Nov. 13, 2023
Applicants:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
National Taiwan University, Taipei, TW;
Inventors:
Assignees:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
NATIONAL TAIWAN UNIVERSITY, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 64/68 (2025.01); H10D 1/68 (2025.01); H10D 30/01 (2025.01); H10D 30/69 (2025.01);
U.S. Cl.
CPC ...
H10D 64/689 (2025.01); H10D 1/68 (2025.01); H10D 1/694 (2025.01); H10D 1/696 (2025.01); H10D 30/0415 (2025.01); H10D 30/701 (2025.01); H10D 64/691 (2025.01);
Abstract
A method includes forming source/drain regions in a semiconductor substrate; depositing a zirconium-containing oxide layer over a channel region in the semiconductor substrate and between the source/drain region; forming a titanium oxide layer in contact with the zirconium-containing oxide layer; forming a top electrode over the zirconium-containing oxide layer, wherein no annealing is performed after depositing the zirconium-containing oxide layer and prior to forming the top electrode.