Hsinchu, Taiwan

Sheng-Feng Kuo

This inventor holds 2 USPTO granted patents. Top assignee: Ennostar Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Feng Kuo. Retrieved from https://idiyas.com/inventor/sheng-feng-kuo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Sheng-Feng Kuo’s Semiconductor Inventions

Introduction

Sheng-Feng Kuo is an inventor based in Hsinchu, Taiwan. His patent work focuses on semiconductor devices and structures. He is associated with Ennostar Corporation and holds 2 patents.

Latest Patents

Kuo’s listed patents describe approaches to semiconductor device design.

“Semiconductor device and semiconductor component including the same” describes an epitaxial structure with an electrode pad on one surface and contact portions on the opposite surface. The contact portions are arranged in two separated ring-shaped groups, with the second group positioned farther from the structure’s geometric center than the first.

“Semiconductor device having semiconductor structure with holes” describes a device with a first semiconductor structure on a substrate. Periodically arranged holes in that structure are partly filled by a dielectric structure, and a second semiconductor structure is positioned above it.

Career Highlights

Kuo’s listed inventions address semiconductor structures, contact arrangements, and the integration of dielectric material within semiconductor layers. His work is associated with Ennostar Corporation.

Collaborations

The provided information lists Shih-Chang Lee and PO-Chou Pan as Kuo’s coworkers. It does not specify their roles in the patents.

Conclusion

Sheng-Feng Kuo’s two listed patents reflect work on semiconductor device architecture, including ring-arranged contacts and periodically patterned holes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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