The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Oct. 20, 2022
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Yao-Ru Chang, Hsinchu, TW;

Yi Hsiao, Hsinchu, TW;

Sheng-Feng Kuo, Hsinchu, TW;

Wei-Chu Liao, Hsinchu, TW;

Shih-Chang Lee, Hsinchu, TW;

Assignee:

Ennostar Corporation, Hsinchu City, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10H 20/857 (2025.01); H10H 20/831 (2025.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10H 20/857 (2025.01); H10H 20/8312 (2025.01);
Abstract

A semiconductor device is provided, which includes an epitaxial structure, an electrode pad, and a contact region. The epitaxial structure includes a geometric center, a first surface and a second surface opposite to the first surface. The electrode pad is on the first surface. The contact region is on the second surface and includes a first group and a second group. The first group includes a plurality of first contact portions separated from each other and is arranged in a first ring shape. The second group includes a plurality of second contact portions separated from each other and is arranged in a second ring shape. A second distance between each of the plurality of second contact portions and the geometric center is greater than a first distance between each of the plurality of first contact portions and the geometric center.


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