Cupertino, CA, United States of America

Sheau-suey Li


Average Co-Inventor Count = 2.9

ph-index = 9

Forward Citations = 648(Granted Patents)


Company Filing History:


Years Active: 1995-2007

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10 patents (USPTO):Explore Patents

Title: Sheau-suey Li: Innovator in Non-Volatile DRAM Technology

Introduction

Sheau-suey Li is a prominent inventor based in Cupertino, CA, known for his significant contributions to the field of semiconductor technology. He holds a total of 10 patents, showcasing his innovative approach to non-volatile dynamic random access memory (DRAM) systems. His work has had a profound impact on memory technology, enhancing data storage solutions.

Latest Patents

Li's latest patents include a method of manufacturing non-volatile DRAM, which involves several intricate steps. This method includes forming p-well and n-well structures within a semiconductor substrate, creating a polysilicon control gate, and establishing gate oxide layers of varying thicknesses. Additionally, his patent on non-volatile differential dynamic random access memory describes a memory cell that integrates non-volatile devices with DRAM cells, allowing for differential operation and improved data retention during power failures.

Career Highlights

Throughout his career, Sheau-suey Li has worked with notable companies such as Xilinx, Inc. and O2ic, Inc. His experience in these organizations has contributed to his expertise in semiconductor design and memory technology. His innovative solutions have positioned him as a key figure in the advancement of non-volatile memory systems.

Collaborations

Li has collaborated with esteemed colleagues, including Kyu Hyun Choi and Daniel Gitlin. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Sheau-suey Li's contributions to non-volatile DRAM technology exemplify his dedication to innovation in the semiconductor industry. His patents and collaborations reflect a commitment to advancing memory solutions that meet the demands of modern technology.

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