This inventor holds 2 USPTO granted patents. Top assignee: Rockwell International Corporation. Active years: 1993-1994.
Company Filing History:
Years Active: 1993-1994
Title: Innovations by Shawn L Johnston
Introduction
Shawn L Johnston is a notable inventor based in Moorpark, CA (US). He has made significant contributions to the field of materials science, particularly in the area of doping techniques for crystalline materials. With a total of 2 patents, his work has advanced the understanding and application of MOCVD (Metal-Organic Chemical Vapor Deposition) processes.
Latest Patents
Shawn's latest patents include a "Technique for doping mercury cadmium telluride MOCVD grown crystalline" and a "Method and apparatus for vapor phase free methyl radical transport of indium dopant species for precise predetermined reproducible doping concentrations to control electrical properties for MOCVD grown materials." Additionally, he has developed a "Technique for doping MOCVD grown crystalline materials using free" which focuses on the "Method for organic free radical, including aliphatic radical, transport of dopant species for precise, predetermined, and reproducible doping concentrations to control electrical properties for chemical vapor deposition grown materials."
Career Highlights
Shawn L Johnston is currently employed at Rockwell International Corporation, where he continues to innovate and contribute to advancements in technology. His expertise in doping techniques has positioned him as a valuable asset in his field.
Collaborations
Shawn has collaborated with notable colleagues such as Charles R Younger and Kenneth L Hess, further enhancing the impact of his work through teamwork and shared expertise.
Conclusion
Shawn L Johnston's contributions to the field of materials science through his innovative patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in MOCVD processes and doping techniques.