Hubei, China

Shaojie Long

This inventor holds 1 USPTO granted patent. Top assignee: Huazhong University of Science and Technology. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shaojie Long. Retrieved from https://idiyas.com/inventor/shaojie-long

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Innovations of Shaojie Long in Three-Dimensional Memory Technology

Introduction

Shaojie Long is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly with his innovative designs and methods. His work focuses on enhancing memory efficiency and performance through advanced engineering techniques.

Latest Patents

Shaojie Long holds a patent for a "Three-dimensional 1S1C memory based on ring capacitor and preparation method." This invention discloses a three-dimensional memory structure that includes a horizontal peripheral electrode layer, a vertical functional layer, and a capacitive dielectric layer. The design features trenches and holes that penetrate vertically, along with an annular groove that surrounds each hole. This innovative approach aims to improve memory cell performance and efficiency.

Career Highlights

Shaojie Long is affiliated with Huazhong University of Science and Technology, where he continues to advance research in memory technology. His work has garnered attention for its potential applications in various electronic devices, contributing to the evolution of memory systems.

Collaborations

He has collaborated with notable colleagues, including Hao Tong and Binhao Wang, to further enhance the research and development of memory technologies. Their combined expertise has led to significant advancements in the field.

Conclusion

Shaojie Long's contributions to three-dimensional memory technology exemplify the innovative spirit of modern inventors. His work not only advances the field but also paves the way for future developments in memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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