Shao-Yang Ma

Title: Innovations of Shao-Yang Ma in Semiconductor Technology

Introduction

Shao-Yang Ma is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent. His work focuses on enhancing the efficiency and functionality of semiconductor devices.

Latest Patents

Shao-Yang Ma holds a patent for a semiconductor device and method. This invention includes a seeding layer in the source/drain region, which is crucial for the performance of the device. The semiconductor device features a plurality of nanostructures over a substrate, a gate structure wrapping around these nanostructures, and a source/drain region adjacent to them. The design incorporates inner spacers between the source/drain region and the gate structure. Notably, the source/drain region includes a polycrystalline seeding layer that covers the sidewalls of the nanostructures and the inner spacers. Additionally, a semiconductor layer with a higher dopant concentration than the seeding layer is positioned over the seeding layer. This innovative approach aims to improve the overall performance of semiconductor devices.

Career Highlights

Shao-Yang Ma is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His role in this company has allowed him to work on cutting-edge technologies and contribute to advancements in semiconductor manufacturing.

Collaborations

Shao-Yang Ma has collaborated with notable colleagues, including Cheng-Yen Wen and Li-Li Su. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in semiconductor research.

Conclusion

Shao-Yang Ma's contributions to semiconductor technology through his patent demonstrate his commitment to innovation in the field. His work not only enhances the functionality of semiconductor devices but also reflects the collaborative spirit of the industry.