Taiwan Semiconductor Manufacturing Comp. Ltd.

Shao-Yang Ma

Yee-Chia Yeo

Chii-Horng Li

Li-Li Su

Cheng-Yen Wen

A semiconductor device including a seeding layer in the source/drain region and a method of forming is provided. The semiconductor device may include a plurality of nanostructures over a substrate, a gate structure wrapping around the plurality of nanostructures, a source/drain region adjacent the plurality of nanostructures, and inner spacers between the source/drain region and the gate structure. The source/drain region may include a polycrystalline seeding layer covering sidewalls of the plurality of nanostructures and sidewalls of the inner spacers, and a semiconductor layer over the seeding layer. The semiconductor layer may have a higher dopant concentration than the seeding layer.

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Tainan, Taiwan

Shao-Yang Ma