Shao-Ming Yang

Title: Innovations of Shao-Ming Yang

Introduction

Shao-Ming Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on the development of advanced semiconductor devices that enhance performance and efficiency.

Latest Patents

Shao-Ming Yang's latest patents include innovative designs for semiconductor devices. One of his patents describes a semiconductor device that features a gate structure, a source region, a drain region, a first conductive type epitaxial layer, a high voltage second conductive type well, a linear graded high voltage first conductive type well, and a first conductive type buried layer. This design optimizes the placement of the buried layer within the epitaxial layer, ensuring improved functionality. Another patent outlines a semiconductor device and method of fabrication that includes a drain region, a source region, a channel region, and a hybrid doped region. This hybrid region is designed to enhance the performance of the device by incorporating a top doped region with a decreasing doping concentration.

Career Highlights

Shao-Ming Yang is currently employed at Nuvoton Technology Corporation, where he continues to innovate in the semiconductor industry. His expertise and contributions have positioned him as a key figure in the development of cutting-edge technologies.

Collaborations

Throughout his career, Shao-Ming Yang has collaborated with talented professionals, including Gene Sheu and Md Imran Siddiqui. These collaborations have further enriched his work and led to advancements in semiconductor technology.

Conclusion

Shao-Ming Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative designs continue to shape the future of semiconductor devices.