The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2016
Filed:
Oct. 02, 2014
Nuvoton Technology Corporation, Hsinchu, TW;
Shao-Ming Yang, Hsinchu, TW;
Gene Sheu, Hsinchu, TW;
Antonius Fran Yannu Pramudyo, Hsinchu, TW;
Erry Dwi Kurniawan, Hsinchu, TW;
Nuvoton Technology Corporation, Hsinchu, TW;
Abstract
A semiconductor device including a gate structure, a source region, a drain region, a first conductive type epitaxial layer, a high voltage second conductive type well, a linear graded high voltage first conductive type well and a first conductive type buried layer is provided. The first conductive type buried layer is located within the first conductive type epitaxial layer and below the high voltage second conductive type well, and a length of the first conductive type buried layer is smaller than a length of the high voltage second conductive type well.